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IRT Nanoelec News

Powergan | Advanced GaN devices embedding a MOS gate @IEDM 2020

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In papers presented at IEDM 2020, scientists from Université Grenoble-Alpes, CEA-Leti, STMicroelectronics gathered in Nanoelec/Powergan program, with colleagues of University of Padova (Italy) recounted experiments with variations of high-electron- mobility transistors (HEMT) based on gallium nitride-on-silicon. GaN-based semiconductors improve both performance and reliability of increasingly compact power converters compared to silicon, and AIGaN/GaN HEMTs have… Lire la suite » ... Read more »

G-RAD, Radiation testing on semiconductors devices & systems

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The #nanoelec PAC-G is organising by December 9-10, 2020, the G-RAD workshop on facilities and methodologies for radiation testing of electronic devices. The goal is to assess current offer and future needs of the industry. #microelectronics #reliability #radhard #neutrons #xrays Radiation effects in semiconductor devices is one of the major reliability concerns in today’s electronics…. Lire la suite » ... Read more »

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